IPD06P

IPD06P004NATMA1 vs IPD06P002NATMA1 vs IPD06P003NATMA1

 
PartNumberIPD06P004NATMA1IPD06P002NATMA1IPD06P003NATMA1
DescriptionMOSFETMOSFETTRENCH 40<-<100V
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current16.4 A35 A-
Rds On Drain Source Resistance90 mOhms38 mOhms-
Vgs th Gate Source Threshold Voltage- 4 V- 4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge- 27 nC- 63 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation63 W125 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 P-Channel1 P-Channel-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min15 S33 S-
Fall Time9 ns19 ns-
Product TypeMOSFETMOSFET-
Rise Time12 ns19 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns47 ns-
Typical Turn On Delay Time9 ns16 ns-
Part # AliasesIPD06P004NIPD06P002N-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD06P004NATMA1 MOSFET
IPD06P002NATMA1 TRENCH 40<-<100V
IPD06P003NATMA1 TRENCH 40<-<100V
IPD06P004NATMA1 TRENCH 40<-<100V
IPD06P005LATMA1 TRENCH 40<-<100V
IPD06P005NATMA1 TRENCH 40<-<100V
IPD06P007NATMA1 TRENCH 40<-<100V
Infineon Technologies
Infineon Technologies
IPD06P002NATMA1 MOSFET
IPD06P005NATMA1 MOSFET
IPD06P007NATMA1 MOSFET
IPD06P002NSAUMA1 MOSFET P-CH TO252-3
IPD06P003NSAUMA1 MOSFET P-CH TO252-3
IPD06P004NSAUMA1 MOSFET P-CH TO252-3
IPD06P005LSAUMA1 MOSFET P-CH TO252-3
IPD06P005NSAUMA1 MOSFET P-CH TO252-3
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