IPD13N

IPD13N03LA G vs IPD13N03LA vs IPD13N03LA G

 
PartNumberIPD13N03LA GIPD13N03LAIPD13N03LA G
DescriptionMOSFET N-Ch 25V 30A DPAK-230 A, 25 V, 0.0128 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance21.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation46 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min36 S / 18 S--
Fall Time2.6 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time4.6 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time5.4 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD13N03LA G MOSFET N-Ch 25V 30A DPAK-2
IPD13N03LA 30 A, 25 V, 0.0128 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
IPD13N03LA G New and Original
IPD13N03LA P New and Original
IPD13N03LAG New and Original
IPD13N03LAG(13N03LA) New and Original
IPD13N03LAGXT New and Original
IPD13N03LAGXT/BKN New and Original
IPD13N03LAP New and Original
IPD13N06 New and Original
IPD13NO3LA New and Original
Infineon Technologies
Infineon Technologies
IPD13N03LA G MOSFET N-CH 25V 30A DPAK
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