| PartNumber | IPD33CN10NGATMA1 | IPD33CN10NGBUMA1 |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 27 A | 27 A |
| Rds On Drain Source Resistance | 25 mOhms | 25 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 18 nC | 24 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 58 W | 58 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | OptiMOS 2 | - |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 30 S | 15 S |
| Fall Time | 4 ns | 4 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 21 ns | 21 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | 17 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns |
| Part # Aliases | G IPD33CN10N SP001127812 | G IPD33CN10N IPD33CN10NGXT SP000096458 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Number of Channels | - | 1 Channel |
| Transistor Type | - | 1 N-Channel |