 | | |
| PartNumber | IPD50N06S2L13ATMA2 | IPD50N06S2L13ATMA1 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 50A DPAK-2 OptiMOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Single | Single |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPD50N06S2L-13 SP001063626 | IPD50N06S2L-13 IPD50N06S2L13XT SP000252172 |
| Unit Weight | 0.139332 oz | 0.011993 oz |
| Vds Drain Source Breakdown Voltage | - | 55 V |
| Id Continuous Drain Current | - | 50 A |
| Rds On Drain Source Resistance | - | 10.2 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 69 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 136 W |
| Channel Mode | - | Enhancement |
| Series | - | XPD50N06 |
| Fall Time | - | 12 ns |
| Rise Time | - | 29 ns |
| Typical Turn Off Delay Time | - | 43 ns |
| Typical Turn On Delay Time | - | 9 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD50N06S2L13ATMA2 | MOSFET N-CHANNEL_55/60V | |
| IPD50N06S2L13ATMA2 | MOSFET N-CH 55V 50A TO252-3 | ||
| IPD50N06S2L13ATMA1 | MOSFET N-CH 55V 50A TO252-3 | ||
Infineon Technologies |
IPD50N06S2L13ATMA1 | MOSFET N-Ch 55V 50A DPAK-2 OptiMOS | |
| IPD50N06S2L13 | New and Original | ||
| IPD50N06S2L-13 | RF Bipolar Transistors MOSFET N-Ch 55V 50A DPAK-2 OptiMOS |