 | | |
| PartNumber | IPD60R600E6ATMA1 | IPD60R600E6 |
| Description | MOSFET | MOSFET N-Ch 650V 7.3A DPAK-2 CoolMOS E6 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Configuration | Single | Single |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | CoolMOS E6 | CoolMOS E6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPD60R600E6 SP001117094 | IPD60R600E6BTMA1 SP000797374 |
| Unit Weight | 0.011993 oz | 0.139332 oz |
| Id Continuous Drain Current | - | 7.3 A |
| Rds On Drain Source Resistance | - | 540 mOhms |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 63 W |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R600E6ATMA1 | MOSFET | |
| IPD60R600E6 | MOSFET N-CH 600V 7.3A TO252 | ||
| IPD60R600E6ATMA1 | MOSFET N-CH 600V 7.3A TO252 | ||
Infineon Technologies |
IPD60R600E6 | MOSFET N-Ch 650V 7.3A DPAK-2 CoolMOS E6 | |
| IPD60R600E6(SP001117094) | New and Original | ||
| IPD60R600E6BTMA1 | - Bulk (Alt: IPD60R600E6BTMA1) |