IPD60R65

IPD60R650CEATMA1 vs IPD60R650CEBTMA1 vs IPD60R650CEAUMA1

 
PartNumberIPD60R650CEATMA1IPD60R650CEBTMA1IPD60R650CEAUMA1
DescriptionMOSFET N-Ch 600V 7A DPAK-2MOSFET CONSUMERMOSFET CONSUMER
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current7 A-9.9 A
Rds On Drain Source Resistance650 mOhms-540 mOhms
Vgs th Gate Source Threshold Voltage2.5 V-2.5 V
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge20.5 nC-20.5 nC
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation63 W-82 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameCoolMOSCoolMOSCoolMOS
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time11 ns-11 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time8 ns-8 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time58 ns-58 ns
Typical Turn On Delay Time10 ns-10 ns
Part # AliasesIPD60R650CEATMA1 SP001276026IPD60R650CE SP001369530IPD60R650CE SP001396884
Unit Weight0.139332 oz0.011993 oz0.011993 oz
Series-CoolMOS CECoolMOS CE
Moisture Sensitive--Yes
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD60R650CEATMA1 MOSFET N-Ch 600V 7A DPAK-2
IPD60R650CEBTMA1 MOSFET CONSUMER
IPD60R650CEAUMA1 MOSFET CONSUMER
Infineon Technologies
Infineon Technologies
IPD60R650CEAUMA1 Trans MOSFET N-CH 600V 9.9A 3-Pin(2+Tab) DPAK T/R
IPD60R650CEBTMA1 MOSFET N-CH 600V 7A TO252
IPD60R650CEATMA1 MOSFET N-CH 600V TO-252-3
IPD60R650CE N-CH 600V 9,9A 650mOhm TO252
IPD60R650CEATMA1 , 2SD23 New and Original
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