PartNumber | IPG20N04S4L08AATMA1 | IPG20N04S4L07AATMA1 | IPG20N04S4L07ATMA1 |
Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 20A TDSON-8 | MOSFET 2N-CH 8TDSON |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | TDSON-8 | - |
Number of Channels | 1 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Configuration | Single | Dual | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Transistor Type | 1 N-Channel | 2 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPG20N04S4L-08A SP001265576 | IPG20N04S4L-07A SP001061264 | - |
Vds Drain Source Breakdown Voltage | - | 40 V | - |
Id Continuous Drain Current | - | 20 A | - |
Rds On Drain Source Resistance | - | 7.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1.7 V | - |
Vgs Gate Source Voltage | - | 16 V | - |
Qg Gate Charge | - | 39 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 65 W | - |
Channel Mode | - | Enhancement | - |
Series | - | IPG20N04 | - |
Fall Time | - | 25 ns | - |
Rise Time | - | 4 ns | - |
Typical Turn Off Delay Time | - | 50 ns | - |
Typical Turn On Delay Time | - | 9 ns | - |