 |  | | |
| PartNumber | IPL60R065P7AUMA1 | IPL60R065P7 NPI | IPL60R065P7 |
| Description | MOSFET HIGH POWER_NEW | N-CH 600V 41A 65mOhm ThinPAK8x8 | Trans MOSFET N-CH 650V 41A 4-Pin VSON T/R (Alt: IPL60R065P7) |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VSON-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 41 A | - | - |
| Rds On Drain Source Resistance | 53 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 67 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 201 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | CoolMOS P7 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 73 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | IPL60R065P7 SP001657396 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPL60R065P7AUMA1 | MOSFET HIGH POWER_NEW | |
| IPL60R065P7AUMA1 | MOSFET N-CH 4VSON | ||
| IPL60R065P7 NPI | N-CH 600V 41A 65mOhm ThinPAK8x8 | ||
| IPL60R065P7 | Trans MOSFET N-CH 650V 41A 4-Pin VSON T/R (Alt: IPL60R065P7) |