IPP023NE

IPP023NE7N3GXKSA1 vs IPP023NE7N3 G vs IPP023NE7N3G

 
PartNumberIPP023NE7N3GXKSA1IPP023NE7N3 GIPP023NE7N3G
DescriptionMOSFET N-Ch 75V 100A TO220-3 OptiMOS 3MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3MOSFET N-CH 75V 120A TO220
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage75 V75 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance2.1 mOhms2.1 mOhms-
Vgs th Gate Source Threshold Voltage2.3 V2.3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge206 nC206 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W300 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height15.65 mm15.65 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min98 S98 S-
Fall Time22 ns22 ns-
Product TypeMOSFETMOSFET-
Rise Time26 ns26 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time70 ns70 ns-
Typical Turn On Delay Time19 ns19 ns-
Part # AliasesG IPP023NE7N3 IPP23NE7N3GXK SP000641722IPP023NE7N3GXKSA1 IPP23NE7N3GXK SP000641722-
Unit Weight0.211644 oz0.211644 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP023NE7N3GXKSA1 MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3
IPP023NE7N3 G MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3
IPP023NE7N3G MOSFET N-CH 75V 120A TO220
IPP023NE7N3GXKSA1 MOSFET N-CH 75V 120A TO220
IPP023NE7N New and Original
IPP023NE7N3 , MMBD1701A New and Original
IPP023NE7N3 G Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220
IPP023NE7N3G,023NE7N New and Original
IPP023NE7N3GS New and Original
Top