IPP06CN1

IPP06CN10 vs IPP06CN10LG vs IPP06CN10L G

 
PartNumberIPP06CN10IPP06CN10LGIPP06CN10L G
DescriptionPower Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABIGBT Transistors MOSFET N-Ch 100V 100A TO220-3
Manufacturer--Infineon Technologies
Product Category--Transistors - FETs, MOSFETs - Single
Series--IPP06CN10
Packaging--Tube
Part Aliases--IPP06CN10LGXKSA1
Unit Weight--0.211644 oz
Mounting Style--Through Hole
Package Case--TO-220-3
Technology--Si
Number of Channels--1 Channel
Configuration--Single
Transistor Type--1 N-Channel
Pd Power Dissipation--214 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 55 C
Fall Time--7 ns
Rise Time--27 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--100 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--6.2 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--26 ns
Typical Turn On Delay Time--17 ns
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP06CN10NGXKSA1 MOSFET N-CH 100V 100A TO-220
IPP06CN10LGXKSA1 MOSFET N-CH 100V 100A TO220-3
IPP06CN10N G MOSFET N-CH 100V 100A TO-220
IPP06CN10LGHKSA1 MOSFET
IPP06CN10 New and Original
IPP06CN10LG Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP06CN10LG,06CN10L New and Original
IPP06CN10LG,06N10L, New and Original
IPP06CN10LG. New and Original
IPP06CN10N New and Original
IPP06CN10NG New and Original
IPP06CN10NG,06CN10N New and Original
IPP06CN10NG,06CN10N,IPP0 New and Original
IPP06CN10L G IGBT Transistors MOSFET N-Ch 100V 100A TO220-3
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