IPP080N0

IPP080N03L G vs IPP080N03LG vs IPP080N03LGHKSA1

 
PartNumberIPP080N03L GIPP080N03LGIPP080N03LGHKSA1
DescriptionMOSFET N-Ch 30V 50A TO220-3 OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance8 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation47 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time2.8 ns--
Product TypeMOSFET--
Rise Time3.6 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time4.6 ns--
Part # AliasesIPP080N03LGHKSA1 SP000264166--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP080N03L G MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3
Infineon Technologies
Infineon Technologies
IPP080N03L G MOSFET N-CH 30V 50A TO220-3
IPP080N06N G MOSFET N-CH 60V 80A TO-220
IPP080N03LG New and Original
IPP080N03LGHKSA1 New and Original
IPP080N06 New and Original
IPP080N06N New and Original
IPP080N06N,IPP080N06NG New and Original
IPP080N06NG New and Original
IPP080N06NG(080N06N) New and Original
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