 |  | | |
| PartNumber | IPP114N12N3 G | IPP114N12N | IPP114N12N3 |
| Description | MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 | ||
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 11.4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 49 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | Single | Single |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 7 nS | 7 ns | 7 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 36 nS | 36 ns | 36 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 nS | 30 nS | 30 nS |
| Part # Aliases | IPP114N12N3GXK IPP114N12N3GXKSA1 SP000652740 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Part Aliases | - | IPP114N12N3GXK IPP114N12N3GXKSA1 SP000652740 | IPP114N12N3GXK IPP114N12N3GXKSA1 SP000652740 |
| Package Case | - | TO-220-3 | TO-220-3 |
| Pd Power Dissipation | - | 136 W | 136 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 75 A | 75 A |
| Vds Drain Source Breakdown Voltage | - | 120 V | 120 V |
| Rds On Drain Source Resistance | - | 11.4 mOhms | 11.4 mOhms |
| Qg Gate Charge | - | 49 nC | 49 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP114N12N3 G | MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 | |
| IPP114N12N3GXKSA1 | MOSFET N-CH 120V 75A TO220-3 | ||
| IPP114N12N | New and Original | ||
| IPP114N12N3 | New and Original | ||
| IPP114N12N3 G(SP00065274 | New and Original | ||
| IPP114N12N3-114N12N | New and Original | ||
| IPP114N12N3G | Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP114N12N3G,114N12N | New and Original | ||
| IPP114N12N3 G | Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 |