IPP180N10N3 stock, IPP180N10N3, IPP180N10N3 G


PartNumber	IPP180N10N3 G	IPP180N10N3GXKSA1
Description	MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3	MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V
Id Continuous Drain Current	43 A	43 A
Rds On Drain Source Resistance	15.5 mOhms	15.5 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	25 nC	25 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	71 W	71 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Tube	Tube
Height	15.65 mm	15.65 mm
Length	10 mm	10 mm
Series	OptiMOS 3	OptiMOS 3
Transistor Type	1 N-Channel	1 N-Channel
Width	4.4 mm	4.4 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	20 S	20 S
Fall Time	5 ns	5 ns
Product Type	MOSFET	MOSFET
Rise Time	12 ns	12 ns
Factory Pack Quantity	500	500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	19 ns	19 ns
Typical Turn On Delay Time	12 ns	12 ns
Part # Aliases	IPP180N10N3GXKSA1 IPP18N1N3GXK SP000683090	G IPP180N10N3 IPP18N1N3GXK SP000683090
Unit Weight	0.211644 oz	0.211644 oz

Search Part Number : "IPP180N10N3", Match & Start with "IPP180N10N3" - Total : 8

Manufacturer	Part #	Description
Infineon Technologies	IPP180N10N3 G	MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3
	IPP180N10N3GXKSA1	MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3
	IPP180N10N3GXKSA1	MOSFET N-CH 100V 43A TO220-3
	IPP180N10N3 G	Darlington Transistors MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3
	IPP180N10N3G	New and Original
	IPP180N10N3	New and Original
	IPP180N10N3 G(SP00068309	New and Original
	IPP180N10N3GXKSA1 , 2SD9	New and Original

IPP180N10N3