 |  | | |
| PartNumber | IPP410N30NAKSA1 | IPP410N30N | IPP410N30N 410N30N |
| Description | MOSFET MV POWER MOS | Transistor MOSFET N-CH 300V 44A 3-Pin TO-220 Tube (Alt: IPP410N30N) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | PG-TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 300 V | - | - |
| Id Continuous Drain Current | 44 A | - | - |
| Rds On Drain Source Resistance | 41 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 65 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 52 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 43 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | IPP410N30N SP001082134 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP410N30NAKSA1 | MOSFET MV POWER MOS | |
| IPP410N30NAKSA1 | MOSFET N-CH TO220-3 | ||
| IPP410N30N | Transistor MOSFET N-CH 300V 44A 3-Pin TO-220 Tube (Alt: IPP410N30N) | ||
| IPP410N30N 410N30N | New and Original |