 |  | | |
| PartNumber | IPP50CN10NGXKSA1 | IPP50CN10NG | IPP50CN10NGHKSA1 |
| Description | MOSFET N-Ch 100V 20A TO220-3 | Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 38 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 44 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | IPP50CN10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 21 S | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP50CN10NGXKSA1 | MOSFET N-Ch 100V 20A TO220-3 | |
| IPP50CN10NG | New and Original | ||
| IPP50CN10NGHKSA1 | Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
Infineon Technologies |
IPP50CN10NGXKSA1 | MOSFET N-CH 100V 20A TO-220 |