 |  | | |
| PartNumber | IPP80N03S4L-03 | IPP80N03S4L-04/4N03L04 | IPP80N03S4L-04 |
| Description | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | IGBT Transistors MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | |
| Manufacturer | Infineon | - | I |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 2.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 140 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Tube | - | Tube |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS-T2 | - | OptiMOS-T2 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 13 ns | - | 7 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | 6 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 62 ns | - | 37 ns |
| Typical Turn On Delay Time | 14 ns | - | 9 ns |
| Part # Aliases | IPP80N03S4L03AKSA1 IPP8N3S4L3XK SP000275328 | - | - |
| Unit Weight | 0.211644 oz | - | 0.211644 oz |
| Part Aliases | - | - | IPP80N03S4L04AKSA1 IPP80N03S4L04XK SP000274981 |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 94 W |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 3.6 mOhms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP80N03S4L-03 | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | |
| IPP80N03S4L-04/4N03L04 | New and Original | ||
| IPP80N03S4L-03 | Darlington Transistors MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | ||
| IPP80N03S4L-04 | IGBT Transistors MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 |