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| PartNumber | IPS105N03L | IPS105N03LG | IPS105N03L G |
| Description | Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | IGBT Transistors MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS 3 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPS105N03LGAKMA1 SP000788218 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | IPAK-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 38 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 2.4 ns |
| Rise Time | - | - | 14 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 35 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 10.5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 14 ns |
| Typical Turn On Delay Time | - | - | 3.7 ns |
| Channel Mode | - | - | Enhancement |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| IPS105N03L | New and Original | ||
| IPS105N03LG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | ||
| IPS105N03LGS | New and Original | ||
| IPS105N03L G | IGBT Transistors MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 | ||
Infineon Technologies |
IPS105N03LGAKMA1 | MOSFET N-CH 30V 35A TO251-3 |