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| PartNumber | IPW60R018CFD7XKSA1 | IPW60R017C7XKSA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 101 A | 109 A |
| Rds On Drain Source Resistance | 18 mOhms | 17 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 251 nC | 240 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 416 W | 446 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Transistor Type | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | 4 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 35 ns | 25 ns |
| Factory Pack Quantity | 240 | 240 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 220 ns | 106 ns |
| Typical Turn On Delay Time | 80 ns | 30 ns |
| Part # Aliases | IPW60R018CFD7 SP001715618 | IPW60R017C7 SP001313542 |
| Tradename | - | CoolMOS |
| Height | - | 21.1 mm |
| Length | - | 16.13 mm |
| Series | - | CoolMOS C7 |
| Width | - | 5.21 mm |
| Unit Weight | - | 0.211644 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW60R018CFD7XKSA1 | MOSFET HIGH POWER_NEW | |
| IPW60R017C7XKSA1 | MOSFET | ||
| IPW60R017C7XKSA1 | HIGH POWER_NEW | ||
| IPW60R018CFD7XKSA1 | HIGH POWER_NEW | ||
| IPW60R017C7 | HIGH POWER_NEW_RO_TUBE (Alt: IPW60R017C7) | ||
| IPW60R017C7 60C7017 | New and Original |