 |  | | |
| PartNumber | IPW60R041P6 | IPW60R041P6 6R041P6 | IPW60R041P6,6R041P6, |
| Description | MOSFET HIGH POWER PRICE/PERFORM | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 77.5 A | - | - |
| Rds On Drain Source Resistance | 37 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 170 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 481 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | CoolMOS P6 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 27 ns | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 90 ns | - | - |
| Typical Turn On Delay Time | 29 ns | - | - |
| Part # Aliases | IPW60R041P6FKSA1 SP001091630 | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW60R041P6 | MOSFET HIGH POWER PRICE/PERFORM | |
| IPW60R041P6FKSA1 | MOSFET HIGH POWER PRICE/PERFORM | ||
| IPW60R041P6FKSA1 | MOSFET N-CH 600V 77.5A TO247-3 | ||
| IPW60R041P6 | MOSFET HIGH POWER PRICE/PERFORM | ||
| IPW60R041P6 6R041P6 | New and Original | ||
| IPW60R041P6,6R041P6, | New and Original |