| PartNumber | IRF100P218XKMA1 | IRF100B201 | IRF100B202 |
| Description | MOSFET TRENCH_MOSFETS | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | MOSFET N-CH 100V 97A TO-220AB |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247AC-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 462 A | 192 A | - |
| Rds On Drain Source Resistance | 1.28 mOhms | 4.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 370 nC | 170 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 556 W | 441 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 240 S | 278 S | - |
| Fall Time | 120 ns | 100 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 110 ns | 97 ns | - |
| Factory Pack Quantity | 400 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 170 ns | 110 ns | - |
| Typical Turn On Delay Time | 50 ns | 17 ns | - |
| Part # Aliases | IRF100P218 SP001619550 | SP001561498 | - |
| Tradename | - | StrongIRFET | - |
| Height | - | 15.65 mm | - |
| Length | - | 10 mm | - |
| Width | - | 4.4 mm | - |
| Unit Weight | - | 0.211644 oz | - |