 |  | | |
| PartNumber | IRF630STRLPBF | IRF630STRL | IRF630STRR |
| Description | MOSFET N-Chan 200V 9.0 Amp | MOSFET N-CH 200V 9A D2PAK | MOSFET N-CH 200V 9A D2PAK |
| Manufacturer | Vishay | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | IRF | - | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |
| Package Case | - | TO-252-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 3 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 20 ns | - |
| Rise Time | - | 28 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 9 A | - |
| Vds Drain Source Breakdown Voltage | - | 200 V | - |
| Rds On Drain Source Resistance | - | 400 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 39 ns | - |
| Typical Turn On Delay Time | - | 9.4 ns | - |
| Channel Mode | - | Enhancement | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF630STRRPBF | MOSFET N-Chan 200V 9.0 Amp | |
| IRF630STRLPBF | MOSFET N-Chan 200V 9.0 Amp | ||
Vishay |
IRF630STRLPBF | MOSFET N-CH 200V 9A D2PAK | |
| IRF630STRL | MOSFET N-CH 200V 9A D2PAK | ||
| IRF630STRR | MOSFET N-CH 200V 9A D2PAK | ||
| IRF630STRRPBF | IGBT Transistors MOSFET N-Chan 200V 9.0 Amp | ||
| IRF630STRLPBF-CUT TAPE | New and Original | ||
| IRF630STRPBF | New and Original |