IRF6617T

IRF6617TRPBF vs IRF6617TR1PBF vs IRF6617TR1

 
PartNumberIRF6617TRPBFIRF6617TR1PBFIRF6617TR1
DescriptionMOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nCMOSFET N-CH 30V 14A DIRECTFETMOSFET N-CH 30V 14A DIRECTFET
ManufacturerInfineon-IOR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDirectFET-ST--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance10.3 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11 nC--
Pd Power Dissipation42 W--
ConfigurationSingle--
PackagingReel--
Height0.7 mm--
Length4.85 mm--
Transistor Type1 N-Channel--
Width3.95 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity4800--
SubcategoryMOSFETs--
Part # AliasesSP001531694--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF6617TRPBF MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
IRF6617TR1PBF MOSFET N-CH 30V 14A DIRECTFET
IRF6617TR1 MOSFET N-CH 30V 14A DIRECTFET
IRF6617TRPBF MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
IRF6617TRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:14A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0062ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.35V, Power Di
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