IRF7471

IRF7471PBF vs IRF7471TR vs IRF7471TRPBF

 
PartNumberIRF7471PBFIRF7471TRIRF7471TRPBF
DescriptionMOSFET 40V 1 N-CH HEXFET 13mOhms 21nCMOSFET N-CH 40V 10A 8-SOICMOSFET N-CH 40V 10A 8-SOIC
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance16 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel--
TypeSmps MOSFET--
Width3.9 mm--
BrandInfineon / IR--
Fall Time4.1 ns--
Product TypeMOSFET--
Rise Time2.7 ns--
Factory Pack Quantity4085--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesSP001563538--
Unit Weight0.019048 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF7471PBF MOSFET 40V 1 N-CH HEXFET 13mOhms 21nC
Infineon Technologies
Infineon Technologies
IRF7471PBF MOSFET N-CH 40V 10A 8-SOIC
IRF7471TR MOSFET N-CH 40V 10A 8-SOIC
IRF7471TRPBF MOSFET N-CH 40V 10A 8-SOIC
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