| PartNumber | IRF7853TRPBF | IRF7853PBF |
| Description | MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg | MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 8.3 A | 8.3 A |
| Rds On Drain Source Resistance | 18 mOhms | 14.4 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 28 nC | 28 nC |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 3800 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001554438 | SP001566352 |
| Unit Weight | 0.019048 oz | 0.017870 oz |
| Vgs th Gate Source Threshold Voltage | - | 4.9 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Forward Transconductance Min | - | 11 S |
| Fall Time | - | 6 ns |
| Rise Time | - | 6.6 ns |
| Typical Turn Off Delay Time | - | 26 ns |
| Typical Turn On Delay Time | - | 13 ns |