| PartNumber | IRF9530STRLPBF | IRF9530SPBF | IRF9530S |
| Description | MOSFET P-CH -100V HEXFET MOSFET | MOSFET P-CH -100V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRF9530SPBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | N |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Packaging | Reel | Tube | Tube |
| Height | 4.83 mm | - | 4.83 mm |
| Length | 10.67 mm | - | 10.67 mm |
| Series | IRF | IRF | IRF |
| Width | 9.65 mm | - | 9.65 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 12 A | - |
| Rds On Drain Source Resistance | - | 300 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 38 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 88 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 P-Channel | - |
| Forward Transconductance Min | - | 3.7 S | - |
| Fall Time | - | 39 ns | - |
| Rise Time | - | 52 ns | - |
| Typical Turn Off Delay Time | - | 31 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |