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| PartNumber | IRFB260NPBF | IRFB260N | IRFB260NPB |
| Description | MOSFET MOSFT 200V 56A 40mOhm 150nC | ||
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 56 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 150 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 380 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | - | Tube |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 29 S | - | - |
| Fall Time | 50 ns | - | 50 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 64 ns | - | 64 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 52 ns | - | 52 ns |
| Typical Turn On Delay Time | 17 ns | - | 17 ns |
| Part # Aliases | SP001551726 | - | - |
| Unit Weight | 0.211644 oz | - | 0.211644 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 380 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 56 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 40 mOhms |
| Qg Gate Charge | - | - | 150 nC |
| Forward Transconductance Min | - | - | 29 S |