IRFB260N

IRFB260NPBF vs IRFB260N vs IRFB260NPB

 
PartNumberIRFB260NPBFIRFB260NIRFB260NPB
DescriptionMOSFET MOSFT 200V 56A 40mOhm 150nC
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current56 A--
Rds On Drain Source Resistance40 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge150 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation380 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingTube-Tube
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel-1 N-Channel
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min29 S--
Fall Time50 ns-50 ns
Product TypeMOSFET--
Rise Time64 ns-64 ns
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time52 ns-52 ns
Typical Turn On Delay Time17 ns-17 ns
Part # AliasesSP001551726--
Unit Weight0.211644 oz-0.211644 oz
Package Case--TO-220-3
Pd Power Dissipation--380 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--56 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--40 mOhms
Qg Gate Charge--150 nC
Forward Transconductance Min--29 S
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFB260NPBF MOSFET MOSFT 200V 56A 40mOhm 150nC
IRFB260NPBF MOSFET N-CH 200V 56A TO-220AB
IRFB260N New and Original
IRFB260NPB New and Original
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