 |  | | |
| PartNumber | IRFBE30PBF | IRFBE30PBF,FBE30,IRFBE30 | IRFBE30PBF-CN |
| Description | MOSFET N-CH 800V HEXFET MOSFET | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 4.1 A | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 78 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | IRFBE | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 2.5 S | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 33 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 82 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFBE30PBF | MOSFET N-CH 800V HEXFET MOSFET | |
Vishay |
IRFBE30PBF | MOSFET N-CH 800V 4.1A TO-220AB | |
| IRFBE30PBF,FBE30,IRFBE30 | New and Original | ||
| IRFBE30PBF-CN | New and Original |