 |  |  | |
| PartNumber | IRFH5006TRPBF | IRFH5006TR2PBF. | IRFH5006TR2PBF |
| Description | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | MOSFET N-CH 60V 100A 5X6 PQFN | |
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 4.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 69 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 156 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 92 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 9.6 ns | - | - |
| Part # Aliases | SP001560332 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFH5006TRPBF | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | |
| IRFH5006TR2PBF | MOSFET N-CH 60V 100A 5X6 PQFN | ||
| IRFH5006TRPBF | MOSFET N-CH 60V 100A 8-PQFN | ||
| IRFH5006TRPBF-CUT TAPE | New and Original | ||
| IRFH5006TR2PBF. | New and Original |