IRFH5053T

IRFH5053TRPBF vs IRFH5053TR2PBF vs IRFH5053TR

 
PartNumberIRFH5053TRPBFIRFH5053TR2PBFIRFH5053TR
DescriptionMOSFET 100V 1 N-CH HEXFET 18mOhms 24nCMOSFET N-CH 100V 9.3A PQFN56
ManufacturerInfineon-IOR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePQFN-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current46 A--
Rds On Drain Source Resistance18 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge24 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation3.1 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height1 mm--
Length6 mm--
Transistor Type1 N-Channel-1 N-Channel
Width5 mm--
BrandInfineon Technologies--
Fall Time9.9 ns-9.9 ns
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time14.6 ns-14.6 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns-18 ns
Typical Turn On Delay Time8.6 ns-8.6 ns
Part # AliasesSP001556266--
Package Case--PQFN-8
Pd Power Dissipation--3.1 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--46 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--18 mOhms
Qg Gate Charge--24 nC
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFH5053TRPBF MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC
IRFH5053TR2PBF MOSFET N-CH 100V 9.3A PQFN56
IRFH5053TRPBF RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC
IRFH5053TR New and Original
IRFH5053TRPBF. New and Original
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