![]() | |||
| PartNumber | IRFH5204TR2PBF | IRFH5204TRPBF. | IRFH5204TRPBF |
| Description | MOSFET MOSFT 40V 100A 4.3mOhm 42nC Qg | RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 4.3mOhms 42nC | |
| Manufacturer | Infineon | - | International Rectifier |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 22 A | - | - |
| Rds On Drain Source Resistance | 4.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 42 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 3.6 W | - | - |
| Configuration | Single | - | Single Quad Drain Triple Source |
| Packaging | Reel | - | Reel |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 96 S | - | - |
| Fall Time | 8.3 ns | - | 8.3 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | 14 ns |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001560370 | - | - |
| Package Case | - | - | PQFN-8 |
| Pd Power Dissipation | - | - | 105 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 4.3 mOhms |
| Typical Turn Off Delay Time | - | - | 18 ns |
| Typical Turn On Delay Time | - | - | 8.4 ns |
| Qg Gate Charge | - | - | 42 nC |
| Channel Mode | - | - | Enhancement |