IRFR1010ZTRP

IRFR1010ZTRPBF vs IRFR1010ZTRPBF,IRFR1010Z vs IRFR1010ZTRPBF.

 
PartNumberIRFR1010ZTRPBFIRFR1010ZTRPBF,IRFR1010ZIRFR1010ZTRPBF.
DescriptionMOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current91 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge63 nC--
Pd Power Dissipation140 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Part # AliasesSP001571020--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFR1010ZTRPBF MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
IRFR1010ZTRPBF RF Bipolar Transistors MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
IRFR1010ZTRPBF,IRFR1010Z New and Original
IRFR1010ZTRPBF. New and Original
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