 | |  | |
| PartNumber | IRFR1205TRPBF | IRFR1205TRLPBF | IRFR1205TRL |
| Description | MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | MOSFET N-CH 55V 44A DPAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 37 A | 37 A | - |
| Rds On Drain Source Resistance | 27 mOhms | 27 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 43.3 nC | 65 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 69 W | 107 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Fall Time | 60 ns | 60 ns | 60 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 69 ns | 69 ns | 69 ns |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 47 ns | 47 ns | 47 ns |
| Typical Turn On Delay Time | 7.3 ns | 7.3 ns | 7.3 ns |
| Part # Aliases | SP001560566 | SP001575974 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Forward Transconductance Min | - | 17 S | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 107 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 44 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 27 mOhms |
| Qg Gate Charge | - | - | 65 nC |
| Forward Transconductance Min | - | - | 17 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFR1205TRPBF | MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC | |
| IRFR1205TRR | MOSFET N-CH 55V 44A DPAK | ||
| IRFR1205TRRPBF | MOSFET N-CH 55V 44A DPAK | ||
| IRFR1205TRL | MOSFET N-CH 55V 44A DPAK | ||
| IRFR1205TRLPBF | MOSFET N-CH 55V 44A DPAK | ||
| IRFR1205TRPBF | MOSFET N-CH 55V 44A DPAK | ||
Infineon / IR |
IRFR1205TRLPBF | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | |
| IRFR1205TRPBF-CUT TAPE | New and Original | ||
| IRFR1205TRPBF,IRFR1205PB | New and Original |