IRFR45

IRFR4510TRPBF vs IRFR4510PBF

 
PartNumberIRFR4510TRPBFIRFR4510PBF
DescriptionMOSFET 100V 63A 13.9mOhm HEXFET 143W 54nCMOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current63 A63 A
Rds On Drain Source Resistance13.9 mOhms11.1 mOhms
Vgs th Gate Source Threshold Voltage3 V4 V
Qg Gate Charge54 nC54 nC
Pd Power Dissipation143 W143 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameStrongIRFETStrongIRFET
PackagingReelTube
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon / IR
Forward Transconductance Min62 S62 S
Fall Time34 ns34 ns
Product TypeMOSFETMOSFET
Rise Time42 ns42 ns
Factory Pack Quantity20003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time42 ns42 ns
Typical Turn On Delay Time18 ns18 ns
Part # AliasesSP001567870SP001564880
Unit Weight0.139332 oz0.139332 oz
Vgs Gate Source Voltage-20 V
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 175 C
Type-HEXFET Power MOSFET
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFR4510TRPBF MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
IRFR4510PBF Darlington Transistors MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
IRFR4510TRPBF MOSFET N CH 100V 56A DPAK
Infineon / IR
Infineon / IR
IRFR4510PBF MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
IRFR4510TRPBF-CUT TAPE New and Original
IRFR4510 New and Original
IRFR4510TR New and Original
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