IRFR9120NTRP

IRFR9120NTRPBF vs IRFR9120NTRPBF TO-252 vs IRFR9120NTRPBF,FR9120N

 
PartNumberIRFR9120NTRPBFIRFR9120NTRPBF TO-252IRFR9120NTRPBF,FR9120N
DescriptionMOSFET 20V -100V P-CH FET 480mOhms 18nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current6.5 A--
Rds On Drain Source Resistance480 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation39 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 P-Channel--
TypePreliminary--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time31 ns--
Product TypeMOSFET--
Rise Time47 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSP001557182--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFR9120NTRPBF MOSFET 20V -100V P-CH FET 480mOhms 18nC
IRFR9120NTRPBF MOSFET P-CH 100V 6.6A DPAK
IRFR9120NTRPBF-CUT TAPE New and Original
IRFR9120NTRPBF TO-252 New and Original
IRFR9120NTRPBF,FR9120N New and Original
IRFR9120NTRPBF,IRFR9120N New and Original
IRFR9120NTRPBF. Transistor Polarity:P Channel, Continuous Drain Current Id:-6.6A, Drain Source Voltage Vds:-100V, On Resistance Rds(on):0.48ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power D
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