IRG4IBC20W

IRG4IBC20WPBF vs IRG4IBC20W vs IRG4IBC20WPBF.

 
PartNumberIRG4IBC20WPBFIRG4IBC20WIRG4IBC20WPBF.
DescriptionIGBT Transistors 600V Warp 60-150kHzIGBT 600V 11.8A 34W TO220FP
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220FP-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.16 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C12 A--
Pd Power Dissipation34 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTube-
Continuous Collector Current Ic Max12 A--
Height9.1 mm--
Length10.6 mm--
Width4.8 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2000--
SubcategoryIGBTs--
Part # AliasesSP001537234--
Unit Weight0.081130 oz--
Series---
Package Case-TO-220-3 Full Pack-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB Full-Pak-
Power Max-34W-
Reverse Recovery Time trr---
Current Collector Ic Max-11.8A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-52A-
Vce on Max Vge Ic-2.6V @ 15V, 6.5A-
Switching Energy-60μJ (on), 80μJ (off)-
Gate Charge-26nC-
Td on off 25°C-22ns/110ns-
Test Condition-480V, 6.5A, 50 Ohm, 15V-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRG4IBC20WPBF IGBT Transistors 600V Warp 60-150kHz
Infineon Technologies
Infineon Technologies
IRG4IBC20WPBF IGBT Transistors 600V Warp 60-150kHz
IRG4IBC20W IGBT 600V 11.8A 34W TO220FP
IRG4IBC20WPBF. New and Original
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