IRG4PH2

IRG4PH20KDPBF vs IRG4PH20K vs IRG4PH20KD

 
PartNumberIRG4PH20KDPBFIRG4PH20KIRG4PH20KD
DescriptionIGBT Transistors 1200V UltraFast 4-20kHzIGBT 1200V 11A 60W TO247ACIGBT 1200V 11A 60W TO247AC
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage3.17 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C11 A--
Pd Power Dissipation60 W--
Minimum Operating Temperature- 55 C--
PackagingTubeBulkBulk
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001547870--
Unit Weight1.340411 oz--
Series---
Package Case-TO-247-3TO-247-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-247ACTO-247AC
Power Max-60W60W
Reverse Recovery Time trr--51ns
Current Collector Ic Max-11A11A
Voltage Collector Emitter Breakdown Max-1200V1200V
IGBT Type---
Current Collector Pulsed Icm-22A22A
Vce on Max Vge Ic-4.3V @ 15V, 5A4.3V @ 15V, 5A
Switching Energy-450μJ (on), 440μJ (off)620μJ (on), 300μJ (off)
Gate Charge-28nC28nC
Td on off 25°C-23ns/93ns50ns/100ns
Test Condition-960V, 5A, 50 Ohm, 15V800V, 5A, 50 Ohm, 15V
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRG4PH20KPBF IGBT Transistors 1200V UltraFast 4-20kHz
IRG4PH20KDPBF IGBT Transistors 1200V UltraFast 4-20kHz
IRG4PH20KPBF IGBT Transistors 1200V UltraFast 4-20kHz
IRG4PH20KDPBF IGBT Transistors 1200V UltraFast 4-20kHz
IRG4PH20K IGBT 1200V 11A 60W TO247AC
IRG4PH20KD IGBT 1200V 11A 60W TO247AC
IRG4PH20KDPBF,G4PH20KD,I New and Original
Top