| PartNumber | IRG4PH40UD2-EP | IRG4PH40UDPBF | IRG4PH40UD-EPBF |
| Description | IGBT Transistors 1200V UltraFast 5-40kHz | IGBT Transistors 1200V UltraFast 5-40kHz | IGBT Transistors 1200V UltraFast 5-40kHz |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.43 V | 2.43 V | 2.43 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 41 A | 41 A | 41 A |
| Pd Power Dissipation | 160 W | 160 W | 160 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 41 A | 41 A | 41 A |
| Height | 20.8 mm | 20.7 mm | 20.7 mm |
| Length | 16.1 mm | 15.87 mm | 15.87 mm |
| Width | 5.5 mm | 5.31 mm | 5.31 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon / IR |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 400 | 400 | 25 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | SP001533572 | SP001537144 | SP001537194 |
| Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |