IRG4PH50UP

IRG4PH50UPBF vs IRG4PH50UPBF,G4PH50U,IRG vs IRG4PH50UPBF,IRG4PH50UDP

 
PartNumberIRG4PH50UPBFIRG4PH50UPBF,G4PH50U,IRGIRG4PH50UPBF,IRG4PH50UDP
DescriptionIGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage3.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C45 A--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max45 A--
Height20.3 mm--
Length15.9 mm--
Width5.3 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001547832--
Unit Weight1.340411 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRG4PH50UPBF IGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT
IRG4PH50UPBF IGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT
IRG4PH50UPBF,G4PH50U,IRG New and Original
IRG4PH50UPBF,IRG4PH50UDP New and Original
IRG4PH50UPBF. New and Original
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