IRG7PSH5

IRG7PSH50UDPBF vs IRG7PSH54K10DPBF vs IRG7PSH50UD

 
PartNumberIRG7PSH50UDPBFIRG7PSH54K10DPBFIRG7PSH50UD
DescriptionIGBT Transistors IGBT DISCRETESIGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-274AA-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2 V2.4 V2 V
Maximum Gate Emitter Voltage30 V+/- 30 V+/- 30 V
Continuous Collector Current at 25 C116 A120 A116 A
Pd Power Dissipation462 W--
Minimum Operating Temperature- 55 C- 40 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingTubeTubeTube
Continuous Collector Current Ic Max116 A65 A116 A
BrandInfineon / IR--
Gate Emitter Leakage Current+/- 200 nA200 nA+/- 200 nA
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001532744--
Series---
Unit Weight-1.340411 oz-
Package Case-TO-247-3TO-247-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-SUPER-247 (TO-274AA)SUPER-247 (TO-274AA)
Power Max-520W462W
Reverse Recovery Time trr-170ns190ns
Current Collector Ic Max-120A116A
Voltage Collector Emitter Breakdown Max-1200V1200V
IGBT Type--Trench
Current Collector Pulsed Icm-200A150A
Vce on Max Vge Ic-2.4V @ 15V, 50A2V @ 15V, 50A
Switching Energy-4.8mJ (on), 2.8mJ (off)3.6mJ (on), 2.2mJ (off)
Gate Charge-435nC440nC
Td on off 25°C-110ns/490ns35ns/430ns
Test Condition-600V, 50A, 5 Ohm, 15V600V, 50A, 5 Ohm, 15V
Pd Power Dissipation-520 W462 W
Collector Emitter Voltage VCEO Max-1200 V1.2 kV
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRG7PSH50UDPBF IGBT Transistors IGBT DISCRETES
Infineon Technologies
Infineon Technologies
IRG7PSH54K10DPBF IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
IRG7PSH50UDPBF IGBT 1200V 116A 462W TO274
IRG7PSH50UD New and Original
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