IRGP30B6

IRGP30B60KD-EP vs IRGP30B60KD-E vs IRGP30B60KD-EPBF

 
PartNumberIRGP30B60KD-EPIRGP30B60KD-EIRGP30B60KD-EPBF
DescriptionIGBT Transistors 600V UltraFast 5-40kHzINSULATED GATE BIPOLAR TRANSISTOR, 60A I(C), 600V V(BR)CES, N-CHANNEL, TO-247AD
ManufacturerInfineonIR-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.35 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation304 W--
Minimum Operating Temperature- 55 C--
PackagingTube--
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001549784--
Unit Weight1.340411 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRGP30B60KD-EP IGBT Transistors 600V UltraFast 5-40kHz
IRGP30B60KD-EP IGBT Transistors 600V UltraFast 5-40kHz
IRGP30B60KDEP New and Original
IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR, 60A I(C), 600V V(BR)CES, N-CHANNEL, TO-247AD
IRGP30B60KD-EPBF New and Original
IRGP30B60KD-EPBF. New and Original
IRGP30B60KDEPBF New and Original
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