 |  | | |
| PartNumber | IRL3502STRRPBF | IRL3502STRR | IRL3502STRLPBF |
| Description | MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC | MOSFET N-CH 20V 110A D2PAK | MOSFET N-CH 20V 110A D2PAK |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 110 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 73.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 140 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Preliminary | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 130 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 140 ns | - | - |
| Factory Pack Quantity | 3200 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 96 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRL3502STRRPBF | MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC | |
Infineon Technologies |
IRL3502STRR | MOSFET N-CH 20V 110A D2PAK | |
| IRL3502STRLPBF | MOSFET N-CH 20V 110A D2PAK | ||
| IRL3502STRRPBF | MOSFET N-CH 20V 110A D2PAK |