 |  | | |
| PartNumber | IRL5602STRLPBF | IRL5602STR | IRL5602STRPBF |
| Description | MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC | ||
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 24 A | - | - |
| Rds On Drain Source Resistance | 42 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 29.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 75 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 84 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 73 ns | - | - |
| Factory Pack Quantity | 3200 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 53 ns | - | - |
| Typical Turn On Delay Time | 9.7 ns | - | - |
| Part # Aliases | SP001573916 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRL5602STRLPBF | MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC | |
| IRL5602STRRPBF | MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC | ||
| IRL5602STR | New and Original | ||
| IRL5602STRPBF | New and Original | ||
Infineon Technologies |
IRL5602STRL | MOSFET P-CH 20V 24A D2PAK | |
| IRL5602STRLPBF | MOSFET P-CH 20V 24A D2PAK | ||
| IRL5602STRR | MOSFET P-CH 20V 24A D2PAK | ||
| IRL5602STRRPBF | MOSFET P-CH 20V 24A D2PAK |