| PartNumber | IRL60B216 | IRL60HS118 | IRL60S216 |
| Description | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-CH 60V 195A |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | PQFN-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 305 A | 18.5 A | - |
| Rds On Drain Source Resistance | 2.2 mOhms | 13.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1.1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 172 nC | 8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 375 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | StrongIRFET | OptiMOS | - |
| Packaging | Tube | Reel | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 264 S | 17 S | - |
| Fall Time | 120 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 185 ns | 21 ns | - |
| Factory Pack Quantity | 1000 | 4000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 190 ns | 9 ns | - |
| Typical Turn On Delay Time | 70 ns | 8.4 ns | - |
| Part # Aliases | SP001568416 | SP001592258 | - |
| Unit Weight | 0.211644 oz | - | - |
| Series | - | OptiMOS 5 | - |
| Transistor Type | - | 1 N-Channel | - |