 |  | | |
| PartNumber | IRL640STRLPBF | IRL640STRLPBF-CUT TAPE | IRL640ST |
| Description | MOSFET N-Chan 200V 17 Amp | ||
| Manufacturer | Vishay | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Rds On Drain Source Resistance | 180 mOhms | - | - |
| Packaging | Reel | - | Reel |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.050717 oz | - | 0.050717 oz |
| Package Case | - | - | TO-252-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 3.1 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 52 ns |
| Rise Time | - | - | 83 ns |
| Vgs Gate Source Voltage | - | - | 10 V |
| Id Continuous Drain Current | - | - | 17 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 180 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 44 ns |
| Typical Turn On Delay Time | - | - | 8 ns |
| Channel Mode | - | - | Enhancement |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRL640STRLPBF | MOSFET N-Chan 200V 17 Amp | |
| IRL640STRRPBF | MOSFET N-Chan 200V 17 Amp | ||
| IRL640STRLPBF-CUT TAPE | New and Original | ||
| IRL640ST | New and Original | ||
Vishay |
IRL640STRR | MOSFET N-CH 200V 17A D2PAK | |
| IRL640STRLPBF | Darlington Transistors MOSFET N-Chan 200V 17 Amp | ||
| IRL640STRRPBF | IGBT Transistors MOSFET N-Chan 200V 17 Amp | ||
| IRL640STRL | MOSFET N-CH 200V 17A D2PAK |