IRLHM62

IRLHM620TRPBF vs IRLHM620TR2PBF vs IRLHM620PBF

 
PartNumberIRLHM620TRPBFIRLHM620TR2PBFIRLHM620PBF
DescriptionMOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nCMOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-8PQFN-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance2.5 mOhms2.5 mOhms-
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge52 nC52 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation37 W37 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Height1.05 mm0.9 mm-
Length3.3 mm3.3 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width3.3 mm3.3 mm-
BrandInfineon / IRInfineon / IR-
Forward Transconductance Min58 S--
Fall Time37 ns--
Product TypeMOSFETMOSFET-
Rise Time25 ns--
Factory Pack Quantity4000400-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time57 ns--
Typical Turn On Delay Time7.5 ns--
Part # AliasesSP001550432SP001558170-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRLHM620TRPBF MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC
IRLHM620TR2PBF MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
IRLHM620PBF New and Original
IRLHM620TRPBF_PSI , 2SK1 New and Original
IRLHM620TRPBF-CUT TAPE New and Original
Infineon Technologies
Infineon Technologies
IRLHM620TRPBF MOSFET N-CH 20V 26A PQFN
IRLHM620TR2PBF IGBT Transistors MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
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