 |  | |
| PartNumber | IRLHM620TRPBF | IRLHM620TR2PBF |
| Description | MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC | MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-8 | PQFN-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 40 A | 40 A |
| Rds On Drain Source Resistance | 2.5 mOhms | 2.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Qg Gate Charge | 52 nC | 52 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 37 W | 37 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 1.05 mm | 0.9 mm |
| Length | 3.3 mm | 3.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - |
| Width | 3.3 mm | 3.3 mm |
| Brand | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 58 S | - |
| Fall Time | 37 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 25 ns | - |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 57 ns | - |
| Typical Turn On Delay Time | 7.5 ns | - |
| Part # Aliases | SP001550432 | SP001558170 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRLHM620TRPBF | MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC | |
| IRLHM620TR2PBF | MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl | ||
Infineon Technologies |
IRLHM620TRPBF | MOSFET N-CH 20V 26A PQFN | |
| IRLHM620TR2PBF | IGBT Transistors MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl | ||
| IRLHM620TRPBF_PSI , 2SK1 | New and Original | ||
| IRLHM620TRPBF-CUT TAPE | New and Original |