IRLHM620TRP

IRLHM620TRPBF vs IRLHM620TRPBF_PSI , 2SK1 vs IRLHM620TRPBF-CUT TAPE

 
PartNumberIRLHM620TRPBFIRLHM620TRPBF_PSI , 2SK1IRLHM620TRPBF-CUT TAPE
DescriptionMOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePQFN-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance2.5 mOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge52 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation37 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length3.3 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width3.3 mm--
BrandInfineon / IR--
Forward Transconductance Min58 S--
Fall Time37 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time57 ns--
Typical Turn On Delay Time7.5 ns--
Part # AliasesSP001550432--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRLHM620TRPBF MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC
Infineon Technologies
Infineon Technologies
IRLHM620TRPBF MOSFET N-CH 20V 26A PQFN
IRLHM620TRPBF_PSI , 2SK1 New and Original
IRLHM620TRPBF-CUT TAPE New and Original
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