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| PartNumber | IRLHS6242TRPBF | IRLHS6242TR2PBF |
| Description | MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC | MOSFET MOSFT 20V 8.5A 11.7mOhm 2.5V cpbl |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-6 | PQFN-6 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 22 A | 10 A |
| Rds On Drain Source Resistance | 11.7 mOhms | 11.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Qg Gate Charge | 14 nC | 14 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 9.6 W | 1.98 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 0.9 mm | 0.9 mm |
| Length | 2 mm | 2 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - |
| Width | 2 mm | 2 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 36 S | 36 S |
| Fall Time | 13 ns | 13 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 15 ns | 15 ns |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 19 ns |
| Typical Turn On Delay Time | 5.8 ns | 5.8 ns |
| Part # Aliases | SP001573008 | SP001558198 |
| Unit Weight | 0.000368 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLHS6242TRPBF | MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC | |
| IRLHS6242TRPBF | MOSFET N-CH 20V 10A PQFN | ||
| IRLHS6242TR2PBF | IGBT Transistors MOSFET MOSFT 20V 8.5A 11.7mOhm 2.5V cpbl | ||
Infineon / IR |
IRLHS6242TR2PBF | MOSFET MOSFT 20V 8.5A 11.7mOhm 2.5V cpbl | |
| IRLHS6242TRPBF. | New and Original |