 |  | | |
| PartNumber | IRLR024NTRPBF | IRLR024NTRPB | IRLR024NTRPBF,IRLR024NPB |
| Description | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Rds On Drain Source Resistance | 110 mOhms | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 38 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 29 ns | 29 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 74 ns | 74 ns | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 7.1 ns | 7.1 ns | - |
| Part # Aliases | SP001578872 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Series | - | HEXFETR | - |
| Package Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | D-Pak | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 45W | - |
| Drain to Source Voltage Vdss | - | 55V | - |
| Input Capacitance Ciss Vds | - | 480pF @ 25V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 17A (Tc) | - |
| Rds On Max Id Vgs | - | 65 mOhm @ 10A, 10V | - |
| Vgs th Max Id | - | 2V @ 250μA | - |
| Gate Charge Qg Vgs | - | 15nC @ 5V | - |
| Pd Power Dissipation | - | 38 W | - |
| Vgs Gate Source Voltage | - | 16 V | - |
| Id Continuous Drain Current | - | 17 A | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Rds On Drain Source Resistance | - | 110 mOhms | - |
| Qg Gate Charge | - | 10 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLR024NTRPBF | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | |
| IRLR024NTRPBF | MOSFET N-CH 55V 17A DPAK | ||
| IRLR024NTRPB | New and Original | ||
| IRLR024NTRPBF,IRLR024NPB | New and Original | ||
| IRLR024NTRPBF,IRLR024NPBF,IRLR024N,LR024N, | New and Original | ||
| IRLR024NTRPBF,LR024N,IRL | New and Original | ||
| IRLR024NTRPBF-CN | New and Original | ||
| IRLR024NTRPBF-CUT TAPE | New and Original |