IRLR3636T stock, IRLR3636T, IRLR3636TRPBF


PartNumber	IRLR3636TRPBF	IRLR3636TRLPBF
Description	MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC	MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V
Id Continuous Drain Current	99 A	99 A
Rds On Drain Source Resistance	6.8 mOhms	6.8 mOhms
Vgs th Gate Source Threshold Voltage	2.5 V	2.5 V
Vgs Gate Source Voltage	16 V	-
Qg Gate Charge	33 nC	49 nC
Minimum Operating Temperature	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	143 W	143 W
Configuration	Single	Single
Channel Mode	Enhancement	-
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Transistor Type	1 N-Channel	1 N-Channel
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon / IR
Forward Transconductance Min	31 S	31 S
Fall Time	69 ns	69 ns
Product Type	MOSFET	MOSFET
Rise Time	216 ns	216 ns
Factory Pack Quantity	2000	3000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	43 ns	-
Typical Turn On Delay Time	45 ns	-
Part # Aliases	SP001574002	SP001569134
Unit Weight	0.139332 oz	0.139332 oz

Search Part Number : "IRLR3636T", Match & Start with "IRLR3636T" - Total : 7

Manufacturer	Part #	Description
Infineon Technologies	IRLR3636TRPBF	MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
	IRLR3636TRPBF	MOSFET N-CH 60V 50A DPAK
	IRLR3636TRLPBF	RF Bipolar Transistors MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
Infineon / IR	IRLR3636TRLPBF	MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
	IRLR3636TRPBF,IRLR3636PB	New and Original
	IRLR3636TRRPBF	New and Original
	IRLR3636TRPBF-CUT TAPE	New and Original

IRLR3636T